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SubjectTowerJazz Announces Korea Electrotechnology Research Institute (KERI) Begins Prototyping Gate Driver IC on its Advanced 0.18um SOI Power Platform

  • NameM*****r
  • Date2018-12-03
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[GlobeNewswire] TowerJazz Announces Korea Electrotechnology Research Institute (KERI) Begins Prototyping Gate Driver IC on its Advanced 0.18um SOI Power Platform


December 3, 2018 – 
TowerJazz, the global specialty foundry leader, today announced Korea Electrotechnology Research Institute (KERI), a government research institute specializing in IC and system development for power and energy fields with advanced technology, has begun prototyping its gate driver IC based on TowerJazz’s advanced power SOI 0.18um platform. These gate driver ICs are aimed for high-temperature, high-voltage applications such as white goods and electric vehicles which need power converters and inverters with high efficiency and high power density.

KERI’s gate driver IC is expected to be a more efficient solution than the IGBT/SiC MOSFET offering as it enables higher operating speeds (500KHz) and a newly added short circuit protection function.  KERI has completed a prototype of the single SiC MOSFET and expects to benefit customers by providing both the SiC MOSFET and the gate driver IC as an optimized set.


“TowerJazz’s SOI power process offers flexibility to optimize device options for our product design, and we are very satisfied with their advanced BCD technology and their strong local support in terms of fast response on our diverse needs. We look forward to cooperating on further projects with TowerJazz,” said Dr. Bahang Wook, Director of Power Semiconductor Research Center at KERI.
 

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